Staff Engineer- GaN Discrete Device Design job opportunity at Renesas Electronics.

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Date2025-12-22T09:05:53.627Z bot
Renesas Electronics Staff Engineer- GaN Discrete Device Design
Experience: General
Pattern: Full-time
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loacation Bengaluru, Karnataka, India
loacation Bengaluru, Kar..........India
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Job DescriptionThe Staff Engineer will play a key role in the Device and Product Group, supporting the development and introduction of state-of-the-art GaN semiconductor devices. This position requires deep expertise in discrete power electronic device design, advanced TCAD simulation, and layout. The role is highly cross-functional, involving collaboration with R&D, design, epitaxy, fabrication, assembly, test, and reliability teams.Key ResponsibilitiesDevice Design: Work with marketing and NPI teams to design and optimize high-voltage GaN discrete power devices to meet customer specifications considering process integration, manufacturability, assembly and cost targets.Layout: Layout of GaN discrete power electronic devices using Cadence Virtuoso or other similar layout tools.TCAD Simulation: Perform advanced TCAD simulations (e.g., using Sentaurus or similar tools) to guide device design, simulate internal electric field profiles and intrinsic device characteristics, extract chip-level parasitic resistance, inductance and capacitance, and simulate package level thermal and electrical parameters using multi-physics simulations.Cross-Functional Collaboration: Work closely with marketing, engineering, applications, and manufacturing teams to develop new product designs.Continuous Improvement: Facilitate process improvements and fixes for reliability or yield issues and contribute to compact model development for PDK integration.

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